发明名称 Charged-particle-beam microlithography methods for exposing a segmented reticle
摘要 Charged-particle-beam (CPB) microlithography apparatus and methods are disclosed that employ a segmented reticle in which the pattern defined by the reticle is divided into multiple subfields, and each subfield is subdivided into multiple subregions each constituting a respective "group" of subregions. During exposure of the pattern from the reticle to a sensitive substrate using a charged particle beam, a charged-particle illumination beam is directed in sequence to each of the groups. At each group, the illumination beam is directed to expose the respective subregions in the group in a predetermined order before directing the illumination beam to a subsequent group. Direction of the illumination from one group to the next can be performed using a first deflector, and direction of the illumination beam from one subregion to the next in a group can be performed using a second deflector.
申请公布号 US6573014(B2) 申请公布日期 2003.06.03
申请号 US20000749962 申请日期 2000.12.27
申请人 NIKON CORPORATION 发明人 YAMAGUCHI TAKESHI;KOJIMA SHINICHI
分类号 H01J37/305;G03F7/20;G21K5/02;H01J37/317;H01L21/027;(IPC1-7):G03C5/00 主分类号 H01J37/305
代理机构 代理人
主权项
地址