发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, DESIGN METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, DESIGN AIDING DEVICE FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, PROGRAM, AND PROGRAM RECORDING MEDIUM
摘要 A first signal path of a circuit 300 of the present invention is formed by connecting a restricted area 331 in the electrically disconnected state, restricted areas 321 and 311 in the electrically connected state in series, using conductors 330, 320, and 310, and contacts 351 and 352. The circuit 300 is constructed by connecting in parallel six signal paths each being divided by a combination of one or two restricted areas provided thereon. Every time the circuit state is switched, a signal path disconnected by one restricted area is changed suitably to a signal path disconnected by two restricted areas, and vice versa, so as to maintain a signal path disconnected by a combination of restricted areas. By doing so, the switch of the circuit between the disconnected state and the connected state can be repeated an unlimited number of times by a change in one freely-chosen layer.
申请公布号 US6573605(B2) 申请公布日期 2003.06.03
申请号 US20020186760 申请日期 2002.07.01
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD 发明人 KAKEDA MASAHIDE
分类号 G06F17/50;H01L21/82;H01L21/822;H01L23/525;H01L27/04;(IPC1-7):H01L23/12 主分类号 G06F17/50
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