| 发明名称 |
Semiconductor device |
| 摘要 |
A bipolar transistor is formed on a semiconductor substrate. A Schottky diode is formed in the collector region of the bipolar transistor. The collector region and the semiconductor substrate are isolated in potential from each other by potential isolating layers.
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| 申请公布号 |
US6573582(B2) |
申请公布日期 |
2003.06.03 |
| 申请号 |
US20010986906 |
申请日期 |
2001.11.13 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
YAMASHITA YASUNORI;YAMAMOTO FUMITOSHI;TERASHIMA TOMOHIDE |
| 分类号 |
H01L21/331;H01L21/761;H01L21/8222;H01L27/06;H01L27/07;H01L29/732;(IPC1-7):H01L27/095;H01L29/00 |
主分类号 |
H01L21/331 |
| 代理机构 |
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代理人 |
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