发明名称 |
Method for manufacturing a semiconductor device by performing a heat-treatment in a hydrogen atmosphere |
摘要 |
In fabricating a semiconductor device, a hydrogen-containing first insulating film is formed over a semiconductor layer, a gate insulating film and a gate electrode, and a first heat-treatment in a hydrogen atmosphere is performed. A second insulating film can be formed on the first insulating film, and a second heat-treatment in a hydrogen atmosphere performed. A hydrogen-containing third insulating film can be formed on the second insulating film, and a third heat-treatment in an atmosphere containing hydrogen or nitrogen performed. By these methods, damages to a semiconductor layer caused by hydrogenation can be avoided.
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申请公布号 |
US6573195(B1) |
申请公布日期 |
2003.06.03 |
申请号 |
US20000490974 |
申请日期 |
2000.01.24 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;ASAMI TAKETOMI;KITAKADO HIDEHITO;ARAI YASUYUKI |
分类号 |
H01L21/30;H01L21/314;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/49;H01L29/786;(IPC1-7):H01L21/469 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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