发明名称 Hybrid circuit having nanotube electromechanical memory
摘要 A hybrid memory system having electromechanical memory cells is disclosed. A memory cell core circuit has an array of electromechanical memory cells, in which each cell is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. An access circuit provides array addresses to the memory cell core circuit to select at least one corresponding cell. The access circuit is constructed of semiconductor circuit elements.
申请公布号 US6574130(B2) 申请公布日期 2003.06.03
申请号 US20010915095 申请日期 2001.07.25
申请人 NANTERO, INC. 发明人 SEGAL BRENT M.;BROCK DARREN K.;RUECKES THOMAS
分类号 B81B3/00;G11C13/02;G11C23/00;H01L21/768;(IPC1-7):G11C11/00 主分类号 B81B3/00
代理机构 代理人
主权项
地址