| 摘要 |
Disclosed are an electron-beam lithography method and system having precision in exposure improved by correcting a beam drift even within the same column of chips, and an electron-beam lithography system having the frequency of correcting a beam drift minimized without causing degradation of precision. In the electron-beam lithography method and electron-beam lithography system, a beam drift is measured frequently. When a beam drift is measured during exposure of each column of chips, a positional deviation is not corrected at the time but is corrected, step by step, while a plurality of stripes is defined. It is thus prevented that a misalignment between adjoining stripes gets larger. Moreover, a beam drift is measured a plurality of times in order to measure a variation in beam drift. If a beam drift is small, a measurement interval is extended. If a beam drift is large, the measurement interval is shortened.
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