| 摘要 |
A semiconductor well layer of second conductive type formed at the surface of a semiconductor substrate of first conductive type. First device isolation areas formed at the surface of the semiconductor well layer. A plurality of photoelectric conversion sections are formed in the first device isolation areas, and an output circuit section is formed at a second device isolation area in contact with the first device isolation areas. The second device isolation area has an impurity density higher than that of the semiconductor well layer. Further, a plurality of third device isolation areas of second conductive type having an impurity density higher than that of the semiconductor well layer are formed in contact with the second device isolation area, between a horizontal charge transfer section and a unnecessary charge discharging section.
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