发明名称 |
Primary ion or electron current adjustment to enhance voltage contrast effect |
摘要 |
A new method is provided for identifying Voltage Contrast that is applied for the evaluation of characteristics of deposition of thin layers of semiconductor material. The voltage contrast is enhanced by applying increased electron beam current, provided by either E-beam or ion-beam current, to the point under investigation.
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申请公布号 |
US6573736(B1) |
申请公布日期 |
2003.06.03 |
申请号 |
US20020042571 |
申请日期 |
2002.01.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
LEE JENG-HAN;LEE SU-CHEN |
分类号 |
G01R31/305;G01R31/307;H01J37/305;(IPC1-7):G01R31/305 |
主分类号 |
G01R31/305 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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