发明名称 Automatic LDMOS biasing with long term hot carrier compensation
摘要 Disclosed are systems and methods for automatic biasing of LDMOS devices at turn-on. The invention provides bias point setting with compensation for hot carrier effects each time the LDMOS device is turned on and also provides temperature compensation during operation of the device. The systems and methods of the invention are scalable such that a plurality of LDMOS devices may simultaneously have their bias points set, and temperature compensation provided.
申请公布号 US6573796(B2) 申请公布日期 2003.06.03
申请号 US20010962975 申请日期 2001.09.24
申请人 INFINEON TECHNOLOGIES AG 发明人 BLAIR CYNTHIA;BARTOLA ROBERT;DIXIT NAGARAJ V.
分类号 H03F1/30;H03F3/193;(IPC1-7):H03F3/04 主分类号 H03F1/30
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