SYNCHRONOUS SEMICONDUCTOR MEMORY DEVICE INCLUDING MULTI-BANK STRUCTURE

摘要

PURPOSE: A synchronous semiconductor memory device including a multi-bank structure is provided to use efficiently a sharing data bus line by performing alternately a read operation and a write operation of the first memory bank and the second memory bank. CONSTITUTION: The second memory bank performs a read operation while the first memory bank performs a write operation or the write operation while the first memory bank performs the read operation. The first memory bank performs the write operation to an input data signal inputted into an input/output pin. A write data path(WP) is used for transferring the input data signal to a memory cell of the second memory bank. A read data path(RP) is used for transferring the output data signals of the memory cells of the first and the second memory banks to the input/output pin through the first input/output line.