| 摘要 |
PURPOSE: A method for manufacturing a cylindrical capacitor in a semiconductor device is provided to increase the effective area of a lower electrode by using an amorphous silicon layer with MPS(Metastable Polysilicon) as the lower electrode. CONSTITUTION: An insulating layer(105) is formed on a substrate(100). A conductive plug(110) is formed to connect the substrate with the insulating layer. A barrier layer(115a) is formed on the conductive plug. An oxide layer is formed on the barrier layer(115a). A stack is formed by selectively etching the barrier layer and the oxide layer. An amorphous silicon layer is formed at the side of the stack. An MPS layer(140b) is grown on the amorphous silicon layer. A cylindrical lower electrode(145a) with curvature is formed at the side of the amorphous silicon layer having the MPS layer(140b). Then, the amorphous silicon layer with the MPS layer(140b) is removed.
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