CVD APPARATUS

摘要

PURPOSE: A CVD(Chemical Vapor Deposition) apparatus is provided to minimize the generation of particles by supplying a purge gas to a bottom face of a reaction chamber and installing a gas exhaust hole at a sidewall of the reaction chamber. CONSTITUTION: A reaction chamber(10) is used for performing a CVD process. A wafer support portion(50) is installed in the inside of the reaction chamber in order to load a wafer. A gas focus ring(70) is installed at a side portion of the reaction chamber in order to inject a process gas from the outside to an upper center portion of the wafer support portion. A purge gas supply portion(90) is installed at a bottom face of the reaction chamber in order to supply a purge gas into the inside of the reaction chamber. A gas exhaust portion(80) is installed at a sidewall of the reaction chamber in order to exhaust the process gas and the purge gas.