| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to be capable of preventing the bridge between a bit line and a storage node contact, the collapse of the bit line and restraining voids of an insulating layer. CONSTITUTION: The first insulating pattern(35) is formed on a semiconductor substrate(30). A bit line(37) is formed at both sidewalls of the first insulating pattern(35). The second insulting layer is formed on the entire surface of the substrate(30) having an oxide layer(39), the first nitride layer(40) and the second oxide layer(41). A contact hole is formed to expose the substrate by selective etching of the second insulating layer and the first insulating pattern(35). A plug(43) is formed in the contact hole by filling a conductive layer, and a storage node(42) is also formed on the resultant structure.
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