METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of improving the uniformity and heat stability of a silicide layer by sequentially forming a cobalt layer and a capping layer after an Ar ion implantation. CONSTITUTION: An isolation layer(102) is formed in a semiconductor substrate(100). A gate electrode(108) is formed on the semiconductor substrate(100). A source and drain region(124) are formed at both sides of the gate electrode(108) in the semiconductor substrate(100), wherein the source and drain region(124) are made of the first to third impurity region(112,114,122). The upper portions of the third impurity region(122) and gate electrode(108) are transformed into amorphous portions by implanting Ar ions on the resultant structure. After sequentially forming a metal layer and a capping layer on the resultant structure, a silicide layer(128) is formed at the amorphous portions by using a heat treatment.