| 摘要 |
PURPOSE: A dielectric structure is provided to promote plating of the conductive layer on the high dielectric constant material by plating dopant. CONSTITUTION: A multilayer dielectric structure includes a first dielectric layer and a second dielectric layer, wherein the first dielectric layer comprises a plating dopant in an amount sufficient to promote plating of a conductive layer on the first dielectric layer. The plating dopant is metallic. The plating dopant is present in the first dielectric layer in an amount of up to 50% by volume.
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