发明名称 |
EXPOSURE METHOD |
摘要 |
PURPOSE: To improve precision of alignment when forming an upper layer pattern by overlaying it on a lower layer pattern using a scanning exposure apparatus. CONSTITUTION: The method of each exposure apparatus comprises steps of: detecting positional information of a plurality of marks formed in a matrix arrangement in the number of at least four or more in a scan direction and at least four or more in a step direction within each shot area on a pilot wafer; computing a difference between respective coordinate components of positional information of the marks obtained from a scan exposure apparatus used for exposing an overlayed layer and of the marks obtained from a scan exposure apparatus used for exposing an overlaying layer; obtaining parameters representing respective lens aberrations from the computed difference; and exposing the overlaying layer based on corrected parameters obtained from the computed parameters.
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申请公布号 |
KR20030043733(A) |
申请公布日期 |
2003.06.02 |
申请号 |
KR20020073871 |
申请日期 |
2002.11.26 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAKAKUWA MANABU;ASANUMA KEITA;HIGASHIKI TATSUHIKO |
分类号 |
G03F7/22;G03F7/20;G03F9/00;H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
G03F7/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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