| 摘要 |
PURPOSE: To provide resist material, etc., capable of efficiently forming a fine pattern by means of a resist pattern in a short time. CONSTITUTION: This resist material contains a first photo acid generator which exhibits an absorption peak for an exposure beam <300 nm and a second photo acid generator which exhibits an absorption peak for an exposure beam≧300 nm. This production method of resist pattern contains a first exposure process of selectively performing the exposure by using the exposure beam <300 nm for a coating film of the resist material and a second exposure process of selectively performing the exposure by using the exposure beam≧300 nm. This resist pattern is manufactured by the production method. This semiconductor device is provided with the pattern formed by the resist pattern and this production method of semiconductor device contains a resist pattern forming process which forms a resist pattern on a substrate layer by the production method and a patterning process of patterning the substrate layer by performing the etching which uses the resist pattern as a mask.
|
