| 摘要 |
PURPOSE: A method for forming a pattern using ArF exposing source is provided to be capable of minimizing the deformation of pattern without using additional processes and equipment. CONSTITUTION: An etch object layer(14) and an anti-reflective layer(15) are sequentially formed on a substrate(10) having gate electrodes(11). A photoresist pattern(16) for ArF is formed on the anti-reflective layer(15). The anti-reflective layer(15) and the etch object layer(14) are selectively etched by using CF4/Ar plasma and the photoresist pattern as a mask. The residue of the etch object layer(14) is selectively etched to expose the surface of the substrate(10).
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