| 摘要 |
PURPOSE: A capacitor of a semiconductor device and a manufacturing method thereof are provided to be capable of preventing the reduction of capacitance due to MPS(Metastable PolySilicon) grains and the bridge between capacitors. CONSTITUTION: A through hole is formed at a predetermined portion of a housing shaped silicon lower electrode(40). A plurality of semispherical MPS grains(43) are formed on the inner surface of the lower electrode. A dielectric layer(44) made of TaON is formed on the semispherical MPS grains(43). An upper electrode made of a TiN layer(45) and a polysilicon layer(46) is completely filled into the remaining space of the housing shaped silicon lower electrode(40). Preferably, the closed structure of the lower electrode is capable of preventing the MPS grains from running out to the outside.
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