SEMICONDUCTOR MEMORY DEVICE HAVING DUMMY ACTIVE REGION

摘要

PURPOSE: A semiconductor memory device having a dummy active region is provided to prevent the deformation and a lifting phenomenon of photoresist patterns by connecting dummy active regions with end portions of main active regions. CONSTITUTION: A semiconductor substrate includes a main memory cell array region(M) and a dummy cell array region(D) surrounding the main memory cell array region. A plurality of parallel main active regions(21a) are arranged on the semiconductor substrate within the main memory cell array region. In addition, the parallel main active regions are extended to the semiconductor substrate within the dummy cell array region. A plurality of dummy active regions(21b) are connected with ends of the parallel main active regions. The dummy active regions are parallel to the direction crossing the parallel main active regions.