| 摘要 |
PURPOSE: A method is provided to be capable of forming a micro pattern of a semiconductor device by simply forming a polymer layer spacer at both sidewalls of a photoresist layer pattern having an intensified coating resistance. CONSTITUTION: A photoresist layer pattern(13a) is formed on a lower structure(11) for forming a hole. The first polymer layer containing a crosslink agent is coated on the resultant structure. The photoresist layer pattern(13a) is hardened by diffusing the crosslinking agent of the first polymer layer into the photoresist layer pattern(13a) using a heat treatment. At this time, the coating resistance of the photoresist layer pattern(13a) is intensified by hardening the photoresist layer pattern(13a). After removing the first polymer layer, the second polymer layer spacer(17a) is formed at both sidewalls of the photoresist layer pattern(13a), thereby simply forming a micro pattern.
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