| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the short between a contact plug and a conductive layer pattern by minimizing the etched portion of the first nitride layer using the second nitride layer. CONSTITUTION: After sequentially forming the first polysilicon plug(33) and a bit line pattern made of a metal line(34a) and the first nitride layer(34b) on a semiconductor substrate(31), the second nitride layer(35) having a thickness of 200-500 angstrom is deposited on the entire surface of the resultant structure. After sequentially forming the second interlayer dielectric(36) and a contact mask on the resultant structure, a contact hole is formed by etching the second interlayer dielectric(36) using the contact mask. At the time, the second nitride layer portion formed on the bit line pattern, is thicker than any other portion, so that the etched portion of the first nitride layer(34b) is minimized, thereby preventing the bit line pattern from being exposed. Then, a storage node contact plug(40) is formed in the contact hole for contacting the first polysilicon plug(33).
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