| 摘要 |
A substrate is provided with a substrate main body made from silicon, and an oxide film for a base formed thereon. The oxide film includes a first oxide film made mainly of a thermal SiO<SUB>2 </SUB>film formed by thermally oxidizing silicon in the substrate main body, and a second oxide film made of a high-temperature oxide film deposited and formed thereon. Alternatively the second oxide film may be formed by TEOS. |
