| 摘要 |
<p>PURPOSE: A test pattern for measuring contact resistance is provided to simplify the measurement of contact resistance of a semiconductor device by using self-aligned line contact. CONSTITUTION: Active regions(40) are defined by forming a device installation layer(30) on a test wafer(20). Connection diffusion layers(61a,61b,61c) are formed on a word line region(60). Source diffusion layers(51a,51b,51c,71a,71b,71c) are formed respectively on the first line contact region(50) and the second one(70) located at both side of word line region. As forming line contact patterns(500a,500b,700a,700b) on each line contact region, 3-Dimension current path is formed along the arrow.</p> |
