STRUCTURE OF POLYSILICON LAYER AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A structure of a polysilicon layer and a method for forming the same are provided to minimize a smiling effect by contacting a doped polysilicon layer with a dielectric layer through an undoped polysilicon layer. CONSTITUTION: The first insulating layer(204) is formed on a substrate(202). The first doped polysilicon layer(206-a) is formed on the first insulating layer. The first undoped polysilicon layer(206-b) is formed on the first doped polysilicon layer. A floating gate(206) is formed with the first doped polysilicon layer and the first undoped polysilicon layer. The second insulating layer(208) is formed on the first undoped polysilicon layer. The second undoped polysilicon layer(210-a) is formed on the second insulating layer. The second doped polysilicon layer(210-b) is formed on the second undoped polysilicon layer. A control gate(210) is formed with the second undoped polysilicon layer and the second doped polysilicon layer.