MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: To provide a manufacturing method for a semiconductor device capable of improving deterioration of life due to current decrease even when a side wall width is installed at a wider value than a proper value. CONSTITUTION: After a gate structure 4, an LDD area 6 and a side wall are formed in this order, arsenic ions 8 are implanted in the upper face of a silicon substrate 1 by oblique injection. An MDD area 9 is formed in the upper face of the silicon substrate 1 by annealing. The MDD area 9 and the gate structure 4 are not mutually overlapped in planar view. In addition, the MDD area 9 is formed shallow at higher concentration than the LDD area 6. Thereafter a source drain area 11 of higher concentration than the MDD area 9 is formed deeper than the LDD area 6.