MAGNETIC RANDOM ACCESS MEMORY

摘要

PURPOSE: A magnetic random access memory is provided to simplify a fabrication process by using only three metal lines of a bit line, a word line, and a plate line. CONSTITUTION: A MOSFET element is formed with the first doped layer(212a) and the second doped layer(212b) formed on a substrate(211) and a gate conductive layer(213a) formed between the first and the second doped layers. A memory element(217) is formed on the first doped layer. The memory element includes a magnetic body. A bit line(219) is connected with the first doped layer through the memory element. A plate line(221) is connected with the second doped layer. An insulating layer is formed between each element. The memory element is formed with GMR device or a TMR device.