| 摘要 |
PURPOSE: A low temperature polysilicon crystallization apparatus for a flat plate display is provided to prevent the damage of a substrate by using a heater and a high power ultraviolet lamp. CONSTITUTION: A lower heater(20) is installed in a chamber(10) for supporting a substrate(100), wherein the lower heater(20) is capable of moving up and down. At this time, the substrate(100) is preheated by the lower heater(20). A high power ultraviolet lamp(30) is installed at the upper portion of the substrate(100) for carrying out a crystallization process. At this time, the bulk damage and warpage of the substrate(100) is prevented by carrying out the crystallization process at the low temperature using the lower heater(20) and the high power ultraviolet lamp(30). Preferably, the wavelength of ultraviolet is 150-400mm and the luminous intensity of the high power ultraviolet lamp(30) is 100-400mJ/cm2.
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