| 摘要 |
PURPOSE: A method for forming a storage node of a capacitor is provided to simplify manufacturing processes and to reduce aspect ratio by forming a core in the storage node. CONSTITUTION: An interlayer dielectric(63), the first conductive layer and the first hard mask are sequentially deposited on a substrate having a contact hole for capacitor. The first conductive layer is selectively etched by using the first hard mask so as to form a core(67). An insulating layer and the second hard mask are formed on the resultant structure. The first conductive layer located on the interlayer dielectric(63) and the second hard mask layer is entirely etched by using the second hard mask as a mask. The second conductive spacer is formed at the both sidewalls of the first conductive layer. By removing selectively the insulating layer, then a cylindrical storage node(81) with the core(67) is formed.
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