RESIST PATTERN THICKENING MATERIAL, RESIST PATTERN AND FORMING METHOD THEREOF, AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A resist pattern thickening material, a resist pattern and a forming method thereof, and a semiconductor device and a manufacturing method thereof are provided to be capable of simply forming a fine resist removing pattern at low cost and improving the etching-resistance of the resist pattern. CONSTITUTION: After forming a resist pattern(3) at the upper portion of a lower layer(5), a resist pattern thickening material layer(1) is coated on the surface of the resist pattern. Then, a pre-baking process is carried out at the resultant structure for forming a coating layer. A mixing layer(10a) is formed between the resist pattern and the resist pattern thickening material layer by the mixing phenomenon between the resist pattern and the resist pattern thickening material layer.