| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of easily obtaining the process margin in trench etching irrespective of pattern size, such as via hole. CONSTITUTION: The first insulating layer(36) and an etch stop layer(37) are sequentially formed on the first conductive layer(35). A groove is formed to expose the surface of the first conductive layer(35) by selectively etching the etch stop layer and the first insulating layer. By under-cut of the first insulating layer(36), the inner wall of the groove has a desired curvature. The second insulating layer(40) is formed on the etch stop layer(37) so as to form voids in the groove. A trench is formed by selectively etching the second insulating layer(40), wherein the trench has a relatively wide width compared to the groove.
|
