ATOMIC LAYER DEPOSITION OF COPPER USING A REDUCING GAS AND NON-FLUORINATED COPPER PRECURSORS

摘要

Methods of forming copper films by sequentially introducing and then reacting nitrogen containing analogs of Copper II ss-diketonates which analogs are more stable source reagents for copper deposition. The nitrogen containing analogs replace -O- with -N(R")- wherein R" is an alkyl group having from one to four carbon atoms. Replacement of each -O- is preferred although replacement of one -O- per cyclic ring is sufficient to improve stability of the copper source reagents. The source reagent can be purified by sublimation to remove solvents and excess ligands prior to semiconductor processing. The processing chamber is preferably a cyclical deposition chamber maintained at a pressure of less than about 10 Torr and the substrate is maintained at a temperature of about 50 to about 200 DEG C.