发明名称 FACE EMISSION SEMICONDUCTOR LASER DEVICE
摘要 PROBLEM TO BE SOLVED: To improve the reliability of a face emission laser having a current narrowing structure by improving power supply characteristics of the face emission laser. SOLUTION: A face emission laser comprises a MQW active layer 24, reflecting mirrors 22, 27 composed of a semiconductor laminate structure for holding the MQW active layer 24 vertically, and a current narrowing layer 26 for specifying a path of an injection current formed in part of the upper reflecting mirror 27. The current narrowing layer 26 includes an Al oxidization region 26A constituting a current stopping region, and an Al non-oxidization region 26B constituting the current path. The area of the Al non-oxidization region 26B exceeds 200μm<2> , and the Al non-oxidization region 26B is separated from the active layer 24 with the aid of the part of the upper reflecting mirror and is formed in the upper reflecting mirror 27. The current narrowing layer 26 is separated from the active layer 24, and the size of the Al non-oxidization region 26B is set to exceed a predetermined value. Hereby, any stress exerted on the active layer 24 owing to a heat treatment upon the current narrowing structure being formed is reduced. Hereby, output characteristics and temperature characteristics of the laser device are improved for its reliability.
申请公布号 JP2003158340(A) 申请公布日期 2003.05.30
申请号 JP20020233223 申请日期 2002.08.09
申请人 FURUKAWA ELECTRIC CO LTD:THE 发明人 SHINAGAWA TATSUSHI;UEDA NATSUMI;YOKOUCHI NORIYUKI;IWAI NORIHIRO
分类号 H01S5/183;(IPC1-7):H01S5/183 主分类号 H01S5/183
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