| 摘要 |
PROBLEM TO BE SOLVED: To eliminate damages to a transistor formation region when an insulating film is processed and to form a transistor and a capacitor which have stable characteristics on the same semiconductor substrate with high reliability. SOLUTION: A method of forming the transistor and capacitor on the same semiconductor substrate 1 includes a process of demarcating the transistor formation region 29 and a capacitor formation region 49 on the semiconductor substrate 1, a process of covering the transistor formation region 29 with a polysilicon film 4, a process of forming a silicon nitride film 11 in the capacitor formation region 49 on the semiconductor substrate 1 where the polysilicon film 4 is formed, and a process of removing the polysilicon film 4 in the transistor formation region 29 where the silicon nitride film 11 is processed. The polysilicon film 4 can avoid etching damages to the transistor formation region 29.
|
