METHOD OF ION IMPLANTATION AND AN IMPLANTER FOR PERFORMING THE METHOD

摘要

Ions are implanted in a substrate using a beam of decaborane ions containing up to 10 atoms of boron in each ion. Decaborane occurs naturally in two isotopes. Prior to use in the ion source to produce the decaborane beam, the boron used in the decaborane feedstock is isotopically enriched to increase the abundance of the most abundant isotope. The resulting mass-to-charge spread in the ion beam from the mass analyser is reduced.