METHODS OF FABRICATING HIGHLY CONDUCTIVE REGIONS IN SEMICONDUCTOR SUBSTRATES FOR RADIO FREQUENCY APPLICATIONS

摘要

Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications are used to fabricate two structures : a first structure includes porous Si silicon regions extending throughout the thickness of an Si substrate 10 that allows for the subsequent formation of metallized posts 18 and metallized moats 16 in the porous regions and a second structure includes staggered deep V-grooves or trenches etched into an Si substrate, or some other semiconductor substrate, from the front and/or the back of the substrate, wherein these V-grooves and trenches are filled or coated with metal to form the metallized moats 16.