摘要 |
<p>The present invention provides a process for producing particles suitable for use as abrasives in chemical-mechanical polishing slurries. The process according to the invention includes mixing at least one crystallization promoter such as Ti[OCH(CH3)2)]4 with at least one cerium compound and at least one solvent, and subjecting said mixture to hydrothermal treatment at a temperature of from about 60 °C to about 700 °C to produce the particles. Particles formed in accordance with the present invention exhibit a large crystallite size, and can be used to polish silicon-containing substrates to a high degree of planarity at a relatively high rate.</p> |