发明名称 EXPOSURE METHOD, EXPOSURE SYSTEM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND MASK
摘要 <p>PROBLEM TO BE SOLVED: To provide an exposure method and an exposure system which can remarkably improve resolution of a fine pattern and to provide a method for manufacturing a semiconductor device, and a mask. SOLUTION: The exposure method is provided with a process for making a charged particle beam B enter a mask in which a charged particle beam transmission part 3a is formed with a prescribed pattern, a process for selecting charged particles having specified energy from among charged particles which have passed the mask 3 by using an energy selecting means 5, and a process for making the selected charged particles having the specified energy enter a sensitized surface 6. This exposure system is used for the exposure method. This method for manufacturing a semiconductor device includes the exposure method, and this mask is used for exposure.</p>
申请公布号 JP2003158065(A) 申请公布日期 2003.05.30
申请号 JP20010357605 申请日期 2001.11.22
申请人 SONY CORP 发明人 OMORI SHINJI
分类号 G03F1/20;G03F1/22;G03F7/20;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 G03F1/20
代理机构 代理人
主权项
地址