| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for reducing an interval for separating patterns on a photoresist layer. SOLUTION: A method for manufacturing semiconductor includes a step for forming a substrate, a step for sticking a polysilicon layer on the substrate, a step for sticking the photoresist layer on the polysilicon layer, a step for patterning the photoresist layer, a step for sticking an inorganic material layer which is conformable and not photosensitive on the patterned photoresist layer, and a step for etching anisotropically the inorganic material layer and a semiconductor material layer. |
