| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein the whole resist film is fluidized when a resist film using an organic film is subjected to reflow by heat and a resist pattern having different film thickness is formed, a fluidized and stretched region has a gentle inclination and is divided indistinctly into a thick resist film and a thin resist film, the problem wherein a resist pattern whose plane form is not defined is left when O2 ashing treatment is performed, and a base film etched by using the resist pattern exhibits a plane form of inferior precision. SOLUTION: Reflow of resist masks 7, 8 is performed by dissolution reflow using chemical liquid, so that a mask pattern can be obtained which is distinctly divided into thick films 17, 18 and newly formed thin films 19, 20. As a result, an etching pattern of a base film using the mask pattern as a mask is superior in precision. |
