| 摘要 |
PROBLEM TO BE SOLVED: To precisely determine the composition of a ternary compound semiconductor crystal layer epitaxially grown on a substrate. SOLUTION: A spectral transmittance of a sample is measured, the sample is etched to measure a spectral transmittance thereof, an interference fringe period c and a cut-off wave number are found in each of the spectral transmittances, and an initial value of the composition x0 is found based on the wave numbers. Then, processings that a crystal layer thickness t is found pursuant to t=1 (2(β0-γ0.x0)c}, that a composition gradientδx is found, that the cut-off wave number is updated based on the t, and that the composition x0 is updated are repeated until the x and the t are converged. After the convergence, the x0 is corrected pursuant to x=(1-κ.δx)x0+ξ.δx to obtain the composition x. In manufacturing of a crystal, the crystal layer is epitaxial-grown on the substrate, the method hereinbefore is executed in plural points on a sample face, the layer is etched to bring the composition x into a target value based on obtained composition gradientδx, and polished finally.
|
