| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing method, a polishing system and a process management system, which enables high grade planarization of a film to be polished, which is deposited on a wafer. SOLUTION: A step St1 sets a polishing rate distribution and a target film thickness distribution in a polishing device 10. A step St2 measures the film thickness distribution of the film to be polished deposited on the wafer 111. A step St3 calculates a predictive film thickness distribution after polishing based on the measured film thickness distribution of the film to be polished and the polishing rate distribution. A step St4 compares the predictive film thickness distribution of the film to be polished after polishing with the target film thickness distribution. A step St5 calculates optimum conditions (polishing time and an optimum pressure value in terms of individual regions of the wafer 111) based on the results of comparison obtained in the step St4. A step St6 controls the polishing device 10 so as to match the optimum conditions. A step St7 performs polishing of the wafer 111. A step St8 measures the film thickness distribution of the film to be polished and, based on these measurement results and the measurement results of the step St2, calculates an up-to-date polishing rate distribution. Returning to the step St1, the polishing rate distribution that has been set is updated. |
