发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method including a photosensitive film removing and cleaning method with excellent contact resistance by effectively removing a residue formed in a via contact hole by continuously carrying out dry cleaning in photosensitive film removal. SOLUTION: This method includes a step of forming an inter-layer insulating film on metal wires, a step of forming a photosensitive film pattern on the inter-layer insulating film, a step of forming an exposure area where a partial area of the metal wires is exposed by etching the inter-layer insulating film, and a photosensitive film removing and cleaning step of removing and cleaning the photosensitive film pattern. The photosensitive film removing and cleaning step includes a step of removing a polymer produced on the side wall of the exposure area by a photosensitive film stripping unit, a step of removing the photosensitive film pattern by the photosensitive film stripping unit, and a step of removing the residue produced on the bottom of the exposure area by the photosensitive film stripping unit.
申请公布号 JP2003158181(A) 申请公布日期 2003.05.30
申请号 JP20020241106 申请日期 2002.08.21
申请人 HYNIX SEMICONDUCTOR INC 发明人 TEI DAIGU
分类号 H01L21/28;G03F7/42;H01L21/302;H01L21/3065;H01L21/311;H01L21/768;(IPC1-7):H01L21/768;H01L21/306 主分类号 H01L21/28
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