| 摘要 |
PROBLEM TO BE SOLVED: To provide a device manufacturing process capable of reducing silicon facets of a silicon active region and a shallow trench isolation interface and contamination after a metal gate is formed. SOLUTION: This method of manufacturing a semiconductor device comprises a first process of providing a substrate equipped with a sacrificial gate island, a source region, and a drain region inside, a second process of manufacturing a source device in the source region while keeping the sacrificial gate island in a state where no oxide spacer is present, and a third process of forming a drain device in the drain region while keeping the sacrificial gate island in a state in which no oxide spacer is present.
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