发明名称 LASER IRRADIATION DEVICE, LASER IRRADIATION METHOD AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method and a device for efficiently performing uniform irradiation with a laser beam even when using a highly coherent laser and a large area substrate. SOLUTION: This laser irradiation device is provided with a laser, a division means for turning the laser beam emitted from the laser into a plurality of the laser beams, a formation means for synthesizing the plurality of the laser beams on or near an irradiation plane and turning them to the laser beam having cyclic energy distribution, and a relative substrate moving means to the laser beam. By using such a laser irradiation device, the entire surface of a semiconductor film can be annealed.
申请公布号 JP2003158089(A) 申请公布日期 2003.05.30
申请号 JP20020238143 申请日期 2002.08.19
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TANAKA KOICHIRO
分类号 H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L21/268 主分类号 H01L21/20
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