| 摘要 |
<p>A method of forming a trench (207) within a semiconductor substrate (202) by providing a patterned first CVD-deposited masking material layer (203) having a first aperture over the semiconductor substrate (202). A second masking layer material is CVD-deposited and etched to form spacers (203s) in the first aperture, the spacers (203s) form a second aperture narrower than the first aperture. The semiconductor substrate (202) is etched through the second aperture such that a trench (207) is formed in the semiconductor substrate (202). In preferred embodiments, the method of the present invention is used in the formation of trench MOSFET devices.</p> |
