| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problem that since gate wires are formed separately, one by one, by a conventional manufacturing method for a thin-film transistor array substrate, static electricity enters a gate wire in subsequent processes and thin-film transistor characteristics deteriorate to cause a decrease in yield. SOLUTION: A plurality of gate wires, a gate wire connection part which connects the plurality of gate wires, and a gate electrode are provided on an insulating substrate and a 1st insulating film is provided thereupon; and a 2nd insulating film is provided on the gate wire connection part, a source electrode, a drain electrode, and a channel formation area, and a contact hole is provided on the gate wire and drain electrode. At this time, the 1st insulating film and 2nd insulating film on the gate wire connection part are etched away and the exposed gate wire connection part is etched away to part the connected gate wires.</p> |
