| 摘要 |
PROBLEM TO BE SOLVED: To improve reproducibility and controllability of Al composition and thickness of an AlGaN layer in a mask narrow aperture part, and control the shape of a beam spot of a semiconductor laser. SOLUTION: When the AlGaN layer is selectively grown from an aperture part of a mask, a growth condition that polycrystalline deposition speed on the mask is intentionally increased is used, so that the degree of concentration of Al material and Ga material to the aperture part is kept stably. In order to control the degree of constriction of current and light at an output end surface while laser performance is maintained, characteristics of an optical waveguide layer, a clad layer, a current constriction layer, etc., are changed to an optical waveguide direction.
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