| 摘要 |
PROBLEM TO BE SOLVED: To suppress the enlargement of the area for a control circuit section of a semiconductor memory. SOLUTION: The semiconductor memory is provided with a memory cell array 11 having a plurality of memory cells MC. The memory cells MC are arranged at the crossing points of a plurality of word lines WL and a plurality of bit lines BL. A row decoder section 21 is provided adjacent to the memory array cell 11 in the semiconductor memory. The section 21 has a plurality of decoding circuits 21a to selectively drive the word lines WL. Moreover, a control circuit section 51 is provided adjacent to the section 21 in the semiconductor memory. The section 51 has at least one control circuit 42 and a portion 52b of the circuit 52 is arranged within the section 21.
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