| 摘要 |
<p>A thick-film semiconductor device manufacturing method in which a non-monocrystalline semiconductor thick film deposited on a substrate such as of glass is processed into an island before laser beam application, an insulating film layer and a gate electrode are formed, a laser beam is applied by using the gate electrode as a mask to conduct both crystallization of the masked central portion of the islandlike semiconductor thick-film layer and annealing of the non-masked side portions there of, and a source electrode and a drain electrode are formed in the annealed portions. Implantation of impurity ions may be conducted before the laser beam application or after the application. By this method, the variations of number and diameter of crystalline particles in each unit electrode are small, thereby efficiently manufacturing a thick-film semiconductor device having a smooth interface between the crystalline semiconductor thick-film layer and the insulating film layer.</p> |
